ST2N2222 Datasheet | SEMTECH

ST 2N2222 / 2N2222A .. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As plementary type the PNP transistor ST 2N2907 and ST 2N2907A are remended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Symbol Value ST 2N2222 ST 2N2222A Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS 60 30 5 600 625 150 -55 to +150 75 40 6 V V V m A m W Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 05/10/2005 ST 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol DC Current Gain at IC=0.1m A, VCE=10V at IC=1m A, VCE=10V at IC=10m A, VCE=10V at IC=150m A, VCE=10V at IC=500m A, VCE=10V Collector Cutoff Current at VCB=50V at VCB=60V at IC=10µA ST 2N2222 ST 2N2222A ST 2N2222 ST 2N2222A Collector Emitter Breakdown Voltage at IC=10m A Emitter Base Breakdown Voltage at IE=10µA Collector Saturation Voltage at IC=150m A, IB=15m A at IC=500m A, IB=50m A Base Saturation Voltage at IC=150m A, IB=15m A at IC=500m A, IB=50m A Gain Bandwidth Product at IC=20m A, VCE=20V, f=100MHz Collector Output Capacitance at VCB=10V, f=1MHz Input Capacitance at VCB=0.5V, f=1MHz ST 2N2222 ST 2N2222A ST 2N2222 ST 2N2222A VBE(sat) VBE(sat) VBE(sat) VBE(sat) f T Cob Cib 0.6 250 1.3 1.2 2.6 2.0 8 30 V V V V MHz p F p F ST 2N2222 ST 2N2222A ST 2N2222 ST 2N2222A VCE(sat) VCE(sat) VCE(sat) VCE(sat) 0.4 0.3 1.6 1 V V V V ST 2N2222 ST 2N2222A V(BR)EBO V(BR)EBO 5 6 V V ST 2N2222 ST 2N2222A V(BR)CEO V(BR)CEO 30 40 V V ICBO ICBO V(BR)CBO V(BR)CBO 60 75 0.01 0.01 µA µA V V ST 2N2222 ST 2N2222A h FE h FE h FE h FE h FE h FE 35 50 75 100 30 40 300 Min....