ST2N2907 Datasheet | SEMTECH

ST 2N2907 / 2N2907A .. PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As plementary type the NPN transistor ST 2N2222 and ST 2N2222A are remended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol ST 2N2907 ST 2N2907A -VCBO -VCEO -VEBO -IC Ptot Tj TS 40 5 600 625 150 -55 to +150 60 60 V V V m A m W Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/12/2005 ST 2N2907 / 2N2907A Characteristics at Ta = 25 OC Parameter DC Current Gain at -IC = 0.1 m A, -VCE = 10 V at -IC = 1 m A, -VCE = 10 V at -IC = 10 m A, -VCE = 10 V at -IC = 150 m A, -VCE = 10 V at -IC = 500 m A, -VCE = 10 V Collector Cutoff Current at -VCB = 50 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 10 m A Emitter Base Breakdown Voltage at -IE = 10 µA Collector Saturation Voltage at -IC = 150 m A, -IB = 15 m A at -IC = 500 m A, -IB = 50 m A Base Saturation Voltage at -IC = 150 m A, -IB = 15 m A at -IC = 500 m A, -IB = 50 m A Gain Bandwidth Product at -IC = 50 m A , -VCE = 20 V, f = 100 MHz Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Input Capacitance at -VBE = 2 V, f = 1 MHz Cib 30 p F Cob 8 p F f T 200 MHz -VBE(sat) -VBE(sat) 1.3 2.6 V V -VCE(sat) -VCE(sat) 0.4 1.6 V V -V(BR)EBO 5 V ST 2N2907 ST 2N2907A -V(BR)CEO -V(BR)CEO 40 60 V V -V(BR)CBO 60 V ST 2N2907 ST 2N2907A -ICBO -ICBO 20 10 n A n A ST 2N2907 ST 2N2907A ST 2N2907 ST 2N2907A ST 2N2907 ST 2N2907A ST 2N2907 ST 2N2907A h FE h FE h FE h FE h FE h FE h FE h FE h FE 35 75 50 100 75 100 100...