ST2N3416 Datasheet | SEMTECH

ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 m A. .. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings- (Ta = 25℃) Symbol Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Total Device Dissipation Derate above 25 C Junction Temperature Storage Temperature Range Value 50 50 5 500 625 5 150 -55 to +150 Unit V V V m A m W m W/ C VCEO VCBO VEBO IC Ptot Tj TS - These ratings are limiting values above which the serviceability of semiconductor device may be impaired. Notes: 1) These ratings are based on a maximum junction temperature of 150℃ 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/07/2003 ST 2N3416 / 2N3417 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=4.5V, IC=2m A Small Signal Current Gain at VCE=4.5V, IC=2m A, f =1k Hz Collector Cutoff Current at VCB=25V at VCB=18V, Ta=100℃ Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=50m A, IB=3m A Base Saturation Voltage at IC=50m A, IB=3m A Collector Emitter Breakdown Voltage- at IC=10Ma Collector Base Breakdown Voltage at IC=10μA Emitter Base Breakdown Voltage at IE=10μA Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case - Pulse Test : Pulse width≦300μs, Duty Cycle≦2%. .. Min. 75 180 75 180 0.6 50 50 5 - Typ. - Max. 225 540 100 15 100 0.3 1.3 200 83.3 Unit n A μA n A V V V V V ST 2N3416 ST 2N3417 ST 2N3416 ST 2N3417 h FE h FE hfe hfe ICBO ICBO IEBO VCE(sat) VBE(sat) V(BR)CEO V(BR)CBO V(BR)EBO Rth A Rth C C /W C /W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock...