ST2N3905 Datasheet | SEMTECH

ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As plementary types the NPN transistors 2N3903 and 2N3904 are remended. On special request, these transistors can be manufactured in different pin configurations. .. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 40 40 6 200 625 150 - 55 to + 150 Unit V V V m A m W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 09/03/2007 ST 2N3905 / 2N3906 .. Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 0.1 m A at -VCE = 1 V, -IC = 1 m A at -VCE = 1 V, -IC = 10 m A at -VCE = 1 V, -IC = 50 m A at -VCE = 1 V, -IC = 100 m A Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 6 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 1 m A Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 10 m A, -IB = 1 m A at -IC = 50 m A, -IB = 5 m A Base Emitter Saturation Voltage at -IC = 10 m A, -IB = 1 m A at -IC = 50 m A, -IB = 5 m A Gain Bandwidth Product at -VCE = 20 V, -IC = 10 m A, f = 100 MHz Symbol 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 h FE h FE h FE h FE h FE h FE h FE h FE h FE h FE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCEsat -VCEsat -VBEsat -VBEsat 2N3905 2N3906 f T f T Ccb Ceb Rth A Min. 30 60 40 80 50 100 30 60 15 30 40 40 6 200 250 - Max. 150 300 50 50 0.25 0.4 0.85 0.95 4.5 10 250 1) Unit n A n A V V V V V V V MHz MHz p F p F K/W Collector Base Capacitance at -VCB = 5 V, f = 100 KHz Emitter Base Capacitance at -VEB = 0.5 V, f = 100 KHz Thermal...