ST2N5086 Datasheet | SEMTECH

ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As plementary type the NPN transistor ST 2N5088 and ST 2N5089 are remended. On special request, these transistors can be manufactured in different pin configurations. .. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 50 50 3 50 500 150 -55 to +150 Unit V V V m A m W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 ST 2N5086 / 2N5087 Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE=5V, -IC=0.1m A at -VCE=5V, -IC= 1m A at -VCE=5V, -IC= 10m A ST 2N5086 ST 2N5087 ST 2N5086 ST 2N5087 ST 2N5086 ST 2N5087 Symbol h FE h FE h FE h FE h FE h FE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) -VBE(on) f T COB NF Min. 150 200 150 200 150 200 50 50 3 40 Typ. 180 2.8 .. Max. 500 800 0.05 0.05 0.3 0.85 3 Unit V V V µA µA V V MHz p F d B Collector Base Breakdown Voltage at -IC=100µA Collector Emitter Breakdown Voltage at -IC=1m A Emitter Base Breakdown Voltage at -IE=10µA Collector Cutoff Current at -VCB=35V Emitter Cutoff Current at -VEB=3V Collector Saturation Voltage at -IC=10m A, -IB=1m A Base Emitter Voltage at -VCE=5V, -IC=1m A Gain Bandwidth Product at -VCE=5V, -IC=0.5m A Output Capacitance at -VCB=10V, f=1MHz Noise Figure at -VCE=6V, -IC=0.3m A, f=100Hz, RS=10KΩ SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 ST 2N5086 / 2N5087 .. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings...