ST2N5400 Datasheet | SEMTECH

ST 2N5400 / 2N5401 .. PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As plementary types the NPN transistors ST 2N5550 and ST 2N5551 are remended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25o C) Symbol Collector Emitter Voltage ST 2N5400 ST 2N5401 Collector Base Voltage ST 2N5400 ST 2N5401 Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range 1) Value 120 150 130 160 5 600 625 1) Unit V V V V V m A m W o o -VCEO -VCEO -VCBO -VCBO -VEBO -IC Ptot Tj TS 150 -55 to +150 Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated: 07/12/2002 ST 2N5400 / 2N5401 Characteristics at Tamb=25 o C Symbol DC Current Gain at-VCE=5V, -IC=1m A at -VCE=5V, -IC=10m A at -VCE=5V, -IC=50m A ST 2N5400 ST 2N5401 ST 2N5400 ST 2N5401 ST 2N5400 ST 2N5401 Collector Emitter Breakdown Voltage at -IC=1m A Collector Base Breakdown Voltage at -IC=100μA Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=100V at -VCB=120V Emitter Cutoff Current at -VEB=3V Collector Saturation Voltage at -IC=10m A, -IB=1m A at -IC=50m A, -IB=5m A Base Saturation Voltage at -IC=10m A, -IB=1m A at -IC=50m A, -IB=5m A Gain Bandwidth Product at -VCE=10V,-IC=10m A,f=100MHz ST 2N5400 .. Min. 30 50 40 60 40 50 120 150 130 160 5 100 100 - Typ. - Max. 180 240 100 50 50 0.2 0.5 1 1 400 400 6 8 200 1) Unit V V V V V n A n A n A V V V V MHz MHz p F d B K/W h FE h FE h FE h FE h FE h FE -V(BR)CEO -V(BR)CEO -V(BR)CBO -V(BR)CBO -V(BR)EBO ST 2N5400 ST 2N5401 ST 2N5400 ST 2N5401 ST 2N5400 ST 2N5401 -ICBO -ICBO -IEBO -VCE sat -VCE sat -VBEsat -VBEsat f T f T CCBO F Rth A ST 2N5401 Collector Base Capacitance at...