ST2N5551 Datasheet | SEMTECH

ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors .. for general purpose, high voltage amplifier applications. As plementary types the PNP transistors ST 2N5400 and ST 2N5401 are remended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range 1) Symbol ST 2N5550 ST 2N5551 ST 2N5550 ST 2N5551 VCEO VCEO VCBO VCBO VEBO IC Ptot Tj TS Value 140 160 160 180 6 600 625 1) Unit V V V V V m A m W o o - 55 to + 150 Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/05/2006 ST 2N5550 / 2N5551 Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 m A at VCE = 5 V, IC = 10 m A at VCE = 5 V, IC = 50 m A Collector Emitter Breakdown Voltage at IC = 1 m A Collector Base Breakdown Voltage at IC = 100 µA Emitter Base Breakdown Voltage at IE = 10 µA Collector Cutoff Current at VCB = 100 V at VCB = 120 V Emitter Cutoff Current at VEB = 4 V Collector Saturation Voltage at IC = 10 m A, IB = 1 m A at IC = 50 m A, IB = 5 m A Base Saturation Voltage at IC = 10 m A, IB = 1 m A at IC = 50 m A, IB = 5 m A Gain Bandwidth Product at VCE = 10 V, IC = 10 m A, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz Noise Figure at VCE = 5 V, IC = 200 µA, RG = 2 KΩ, f = 30 Hz…15 KHz ST 2N5550 ST 2N5551 Thermal Resistance Junction to Ambient 1) .. Symbol ST 2N5550 ST 2N5551 ST 2N5550 ST 2N5551 ST 2N5550 ST 2N5551 h FE h FE h FE h FE h FE h FE Min. 60 80 60 80 20 30 140 160 160 180 6 Max. 250 250 - Unit V V V V V ST 2N5550 V(BR)CEO ST 2N5551 V(BR)CEO ST 2N5550 V(BR)CBO ST 2N5551...