ST2N7000 Datasheet | SEMTECH

ST 2N7000 Small Signal MOSFET 200m Amps, 60 Volts N-Channel .. 1. Source 2.Gate 3.Drain TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Rating Drain Source Voltage Drain-Gate Voltage (RGS=1MΩ) Gate-source Voltage - Continuous - Non-repetitive (tp≤50μs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC=25OC Derate above 25OC Junction Temperature Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD Tj TS Value 60 60 ±20 ±40 200 500 350 2.8 150 -55 to +150 Unit V V V Vpk m A m A m W m W/OC Thermal Characteristics Characteristic Thermal Resistance, Junction to Ambient Symbol RθJA Value 357 Unit C/W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 26/08/2005 ST 2N7000 Characteristics at TC=25 OC Characteristic Off Characteristics Drain-Source Breakdown Voltage at VGS=0, ID=10μA Zero Gate Voltage Drain Current at VDS=48V, VGS=0 at VDS=48V, VGS=0, TJ=125 OC Gate-Body Leakage Current, Forward at VGSF=15V, VDS=0 Gate-Body Leakage Current, Reverse at VGSR=-15V, VDS=0 On Characteristics1) Gate Threshold Voltage at VDS= VGS, ID=1m A Static Drain-Source On-Resistance at VGS=10V, ID=500m A at VGS=4.5V, ID=75m A Drain-Source On-Voltage at VGS=10V, ID=500m A at VGS=4.5V, ID=75m A On-State Drain Current at VGS=4.5V, VDS=10V Forward Transconductance at VDS=10V, ID=200m A Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance at VDS=25V VGS=0 f=1MHz Ciss Coss Crss 60 25 5 p F ID(on) gfs VDS(on) 75 100 2.5 0.45 m A µmhos V r DS(on) 5 6 Ohm IGSSF IGSSR IDSS 1 1 10 -10 μA m A n A n A Symbol Min. Typ. .. Max. Unit V(BR)DSS - - VGS(th) - 3 Switching Characteristics1) at VDD=15V, ID=500m A, Turn-On Delay Time RG=25Ω, RL=30Ω Turn-Off Delay Time 1) ton toff - - 10 10 ns ns Vgen=10V Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%. SEMTECH ELECTRONICS...