ST2SA1015
ST2SA1015 is PNP Silicon Epitaxial Planar Transistor manufactured by SEMTECH.
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ST 2SA1015
PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As plementary type the NPN transistor ST 2SC1815 is remended. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS Value 50 50 5 150 50 400 125 -65 to +150 Unit V V V m A m A m W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
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Dated : 07/12/2002
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ST 2SA1015
Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=6V, -IC=2m A Current Gain Group O Y G L at -VCE=6V, -IC=150m A Collector Base Breakdown Voltage at -IC=100μA Collector Emitter Breakdown Voltage at -IC=10m A Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=50V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=100m A, -IB=10m A Base Saturation Voltage at -IC=100m A, -IB=10m A Gain Bandwidth Product at -VCE=10V, -IC=1m A Output Capacitance at -VCB=10V, f=1MHz Noise Figure at -VCE=6V, -IC=0.1m A at f=100Hz, RS=10KΩ NF 0.5 6 d B COB 4 7 p F f T 80 MHz -VBE(sat) 1.1 V -VCE(sat) 0.1 0.3 V -IEBO 0.1 μA -ICBO 0.1 μA -V(BR)EBO 5 V -V(BR)CEO 50 V -V(BR)CBO 50 V h FE h FE h FE h FE h FE 70 120 200 350 25 140 240 400 700 Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated :...