• Part: ST2SA1016
  • Description: PNP Silicon Epitaxial Planar Transistor
  • Category: Transistor
  • Manufacturer: SEMTECH
  • Size: 176.74 KB
Download ST2SA1016 Datasheet PDF
SEMTECH
ST2SA1016
ST2SA1016 is PNP Silicon Epitaxial Planar Transistor manufactured by SEMTECH.
.. ST 2SA1016 PNP Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC -ICP Ptot Tj TS Value 120 100 5 50 100 400 125 -55 to +125 Unit V V V m A m A m W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/5/2004 .. ST 2SA1016 Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=6V, -IC=1m A Current Gain Group F G H Collector Base Breakdown Voltage at -IC=10μA Collector Emitter Breakdown Voltage at -IC=1m A Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=80V Emitter Cutoff Current at -VEB=4V Collector Emitter Saturation Voltage at -IC=10m A, -IB=1m A Gain Bandwidth Product at -VCE=6V, -IC=1m A Output Capacitance at -VCB=10V, f=1MHz Noise Level at VCC=30V, IC=1m A at Rg=56KΩ,VG=77d B/1k Hz Noise Peak Level at VCC=30V, IC=1m A at Rg=56KΩ,VG=77d B/1k Hz CNO(peak) 200 m V CNO(ave) 35 m V COB 2.2 p F f T 110 MHz -VCE(sat) 0.5 V -IEBO 1 μA -ICBO 1 μA -V(BR)EBO 5 V -V(BR)CEO 100 V -V(BR)CBO 120 V h FE h FE h FE 160 280 480 320 560 960 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated :...