ST2SC1213
ST2SC1213 is NPN Silicon Epitaxial Planar Transistor manufactured by SEMTECH.
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ST 2SC1213 / 2SC1213A
NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As plementary type the PNP transistor ST 2SA673 and ST 2SA673A are remended. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 o C) Symbol Value ST 2SC1213 Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS 35 35 4 500 400 150 -55 to +150 ST 2SC1213A 50 50 V V V m A m W
Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
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Dated : 7/12/2002
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ST 2SC1213 / 2SC1213A
Characteristics at Tamb=25 OC Symbol DC Current Gain at IC=10m A, VCE=3V B C D at IC=500m A, VCE=3V Collector Cutoff Current at VCB=20V at VCB=20V at IC=10μA ST 2SC1213 ST2SC1213A ST 2SC1213 ST 2SC1213A Collector Emitter Breakdown Voltage at IC=1m A Emitter Base Breakdown Voltage at IE=10μA Collector Saturation Voltage at IC=150m A, IB=15m A Base Emitter Voltage at IC=10m A, VCE=3V ST 2SC1213 ST 2SC1213A VBE VBE 0.64 0.64 V V ST 2SC1213 ST 2SC1213A VCE(sat) VCE(sat) 0.2 0.2 0.6 0.6 V V ST 2SC1213 ST 2SC1213A V(BR)EBO V(BR)EBO 4 4 V V ST 2SC1213 ST 2SC1213A V(BR)CEO V(BR)CEO 35 50 V V h FE h FE h FE h FE ICBO ICBO V(BR)CBO V(BR)CBO 60 100 160 10 35 50 120 200 320 0.5 0.5 μA μA V V Min. Typ. Max. Unit
Collector Base Breakdown Voltage
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated :...
