ST2SC1359 Datasheet | SEMTECH

.. ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE=6V, IC=1m A Collector Base Breakdown Voltage at IC=100µA Collector Emitter Breakdown Voltage at IC=10m A Emitter Base Breakdown Voltage at IE=10µA Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100m A, IB=10m A Gain Bandwidth Product at VCE=6V, IC=10m A Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5m A, f=1KHz, RS=500Ωat Symbol h FE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) f T COB NF Min. 150 30 20 5 Typ. 125 1.8 4 Max. 650 0.1 0.1 0.3 Unit V V V µA µA V MHz p F d B Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 30 20 5 100 250 150 -55 to +150 Unit V V V m A m W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 .. ST 2SC1359 Total power dissipation vs. ambient temperature 300 Free air Normalized collector cutoff current vs. ambient temperature 10000 I CBO(Ta) Normalized collector cutoff current I CBO(Ta=25 C) 250 200 150 100 50 P tot (m W) 100 120 140 Tamb ( C) Tamb ( C) Collector current vs. collector emitter voltage Collector current vs. collector emitter voltage 100 80 60 Ic - m A 1.0 0.9 0.8 0.7 0.6 0.5 0.4 10 8 6 Ic - m A 4.5 4 3.5 3 2.5 2 1.5...