ST2SC2310 Datasheet | SEMTECH

.. ST 2SC2310 NPN Silicon Epitaxial Planar Transistor low frequency ,low noise amplifier . The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC -IE Ptot Tj TS Value 55 50 5 100 100 200 150 -55 to +150 Unit V V V m A m A m W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 .. ST 2SC2310 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=12V, IC=2m A Current Gain Group B C Collector Cutoff Current at VCB=18V Emitter Cutoff Current at VEB=2V Collector Emitter Saturation Voltage at IC=10m A, IB=1m A Transition Frequency at VCE=12V, IC=2m A Base Emitter Voltage at IC=2m A, VCE=12V Collector Output Capacitance at VCB=10V, f=1MHz Collector Base Breakdown Voltage at IC=10μA Collector Emitter Breakdown Voltage at IC=1m A Emitter Base Breakdown Voltage at IC=10μA Noise Figure at VCE=6V, IC=0.1m A, f=120Hz, Rg=500Ω Small Signal Input Impedance at VCE=5V, IC=0.1m A,f=270Hz Small Signal Feedback Ratio at VCE=5V, IC=0.1m A,f=270Hz Small Signal Current Transfer Ratio at VCE=5V, IC=0.1m A,f=270Hz Small Signal Output Admittance at VCE=5V, IC=0.1m A,f=270Hz hoe 11 μS hfe 130 hre 70 X10 -6 Min. Typ. Max. Unit h FE h FE 100 160 - 200 320 - ICBO - - μA IEBO - - μA VCE(sat) - - V f T - 230 -...