• Part: ST2SC2362
  • Description: NPN Silicon Epitaxial Planar Transistor
  • Category: Transistor
  • Manufacturer: SEMTECH
  • Size: 176.86 KB
Download ST2SC2362 Datasheet PDF
SEMTECH
ST2SC2362
ST2SC2362 is NPN Silicon Epitaxial Planar Transistor manufactured by SEMTECH.
.. ST 2SC2362 NPN Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC ICP Ptot Tj TS Value 120 100 5 50 100 400 125 -55 to +125 Unit V V V m A m A m W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/5/2004 .. ST 2SC2362 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1m A Current Gain Group F G H Collector Base Breakdown Voltage at IC=10μA Collector Emitter Breakdown Voltage at IC=1m A Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=80V Emitter Cutoff Current at VEB=4V Collector Emitter Saturation Voltage at IC=10m A, IB=1m A Gain Bandwidth Product at VCE=6V, IC=1m A Output Capacitance at VCB=10V, f=1MHz Noise Level at VCC=30V, IC=1m A at Rg=56KΩ,VG=77d B/1k Hz Noise Peak Level at VCC=30V, IC=1m A at Rg=56KΩ,VG=77d B/1k Hz CNO(peak) 200 m V CNO(ave) 35 m V COB 1.8 p F f T 130 MHz VCE(sat) 0.5 V IEBO 1 μA ICBO 1 μA V(BR)EBO 5 V V(BR)CEO 100 V V(BR)CBO 120 V h FE h FE h FE 160 280 480 320 560 960 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated :...