ST2SC2412
ST2SC2412 is NPN Silicon Epitaxial Planar Transistor manufactured by SEMTECH.
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ST 2SC2412
NPN Silicon Epitaxial Planar Transistor for general purpose applications. The transistor is subdivided into three groups Q, R and S. according to its DC current gain.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25o C) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 60 50 7 150 200 150 -55 to +150 Unit V V V m A m W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/06/2003
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ST 2SC2412
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1m A Q R S Collector Base Breakdown Voltage at IC=50μA Collector Emitter Breakdown Voltage at IC=1m A Emitter Base Breakdown Voltage at IE=50μA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=7V Collector Saturation Voltage at IC=50m A, IB=5m A Gain Bandwidth Product at VCE=12V, -IE=2m A, f=100MHz Output Capacitance at VCE=12V, f=1MHz COB 2 3.5 p F f T 180 MHz VCE(sat) 0.4 V IEBO 0.1 μA ICBO 0.1 μA V(BR)EBO 7 V V(BR)CEO 50 V V(BR)CBO 60 V h FE h FE h FE 120 180 270 270 390 560 Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/06/2003
..
ST 2SC2412
Fig. 1 Grounded emitter propagation characteristics
50 100 VCE=6V
Fig.2 Grounded emitter output characteristics(I)
Ta=25 o C 0.50m A 0.45m A 0.40m A 10
Fig.3 Grounded emitter output characteristics(II)
Ta=25 o C 30 A 27 A 24 A 21 A 6 18 A 15 A 4 2 0 0 4 8 12 16 20 12 A 9 A 6 A 3 A I B =0A
Collector current Ic (m A)
Collector current Ic (m A)
0.35m A 0.30m A
Collector current Ic (m A)
20 10
Ta=100 o...
