ST2SC2786
ST2SC2786 is NPN Silicon Epitaxial Planar Transistor manufactured by SEMTECH.
Features
1) High gain bandwidth product 2) Small output capacitance 3) Low noise figure
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 30 20 4 20 20 250 150 -55 to +150 Unit V V V m A m A m W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/05/2003
..
ST 2SC2786
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1m A Current Gain Group M L K Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=4V Base Emitter Voltage at VCE=6V, IC=1m A Collector Saturation Voltage at IC=10m A, IB=1m A Gain Bandwidth Product at VCE=6V, IE=-1m A Power Gain at VCE=6V, IE=-1m A at f=100MHz, RG=50Ω Collector Base Time Constant at VCE=6V, IE=-1m A, f=31.9MHz Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=-1m A at f=100MHz, RG=50Ω NF 3.0 5 d B Gpe 18 22 d B h FE h FE h FE ICBO IEBO VBE VCE(sat) f T 40 60 90 400 0.72 0.1 600 80 120 180 0.1 0.1 0.3 μA μA V V MHz Min. Typ. Max. Unit
CC․rb’b COB
- 12 1
15 1.3
Ps p F
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/05/2003
..
ST 2SC2786
Total power dissipation vs. ambient temperature
Total power dissipation, m W
Collector current vs. collector emitter voltage
10 8 80 70 6 4
Collector current vs. base emitter voltage
50 20 10 5
In free air 250 200
VCE=6V
Ic (m...
