• Part: ST2SC2901
  • Description: NPN Silicon Epitaxial Planar Transistor
  • Category: Transistor
  • Manufacturer: SEMTECH
  • Size: 289.91 KB
Download ST2SC2901 Datasheet PDF
SEMTECH
ST2SC2901
ST2SC2901 is NPN Silicon Epitaxial Planar Transistor manufactured by SEMTECH.
Features ․High frequency current gain ․High speed switching ․Small output capacitance TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (10μs pulse) Power Dissipation Junction Temperature Storage Temperature Range VCBO VCES VCEO VEBO IC IC Ptot Tj TS Value 40 40 15 5 200 500 600 150 -55 to+150 Unit V V V V m A m A m W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/08/2003 .. ST 2SC2901 Characteristics at Tamb=25 OC Symbol DC Current Gain- at VCE=1V, IC=10m A Current Gain Group L K Collector Cutoff Current at VCB=20V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage- at IC=10m A, IB=1m A Base Saturation Voltage- at IC=10m A, IB=1m A Turn-on Time at VCC=3V, IC=10m A, IB1=3m A, -VBE=1.5V Storage Time at IC=10m A, IB1= -IB2=10m A Turn-off Time at VCC=3V, IC=10m A, IB1=3m A, -IB2=1.5m A Gain Bandwidth Product at VCE=10V, -IE=10m A, f=100MHz Output Capacitance at VCB=5V, f=1MHz COB 1.8 4 p F f T 500 750 MHz toff 12 18 ns tstg 6 13 ns ton 8 12 ns VBE(sat) 0.8 0.85 V VCE(sat) 0.15 0.25 V IEBO 0.1 μA ICBO 0.1 μA h FE h FE 40 100 120 200 Min. Typ. Max. Unit - Pulsed PW≦350μs, Duty Cycle≦2% SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/08/2003 .. ST 2SC2901 Collector current vs. collector emitter voltage 200 160 6 120 80 40 4 25 20 10 8 16 12 8 Collector current vs. collector emitter voltage 180 160 140 120 100 80 Ic (m A) 2 1 I B =0.5m A 0 0 0.4 0.8 1.2 1.6 2.0 Ic (m A) IB=20 A VCE (V) VCE (V) Total power dissipation vs. ambient temperature DC current gain vs. collector...