ST2SC401 Datasheet | SEMTECH

ST 2SC401 NPN Silicon Epitaxial Planar Transistor for low saturation switching and voltage regulator applications. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 80 60 5 1 625 150 - 55 to + 150 Unit V V V A m W Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 100 m A at VCE = 2 V, IC = 1 A Collector Base Cutoff Current at VCB = 60 V Emitter Base Cutoff Current at VEB = 5 V Collector Emitter Breakdown Voltage at IC = 1 m A Collector Emitter Saturation Voltage at IC = 500 m A, IB = 50 m A Base Emitter on Voltage at VCE = 2 V, IC = 500 m A Gain Bandwidth Product at VCB = 10 V, IC = 50 m A Output Capacitance at VCB = 10 V, f = 1 MHz Symbol h FE h FE ICBO IEBO V(BR)CEO VCE(sat) VBE(on) f T Cob Min. 200 80 60 - Typ. 160 10 Max. 400 100 100 0.4 1.2 - Unit n A n A V V V MHz p F SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ®  Dated：29/02/2012 Rev：01 ST 2SC401 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ®  Dated：29/02/2012...