ST2SD1303
ST2SD1303 is NPN Silicon Epitaxial Planar Transistor manufactured by SEMTECH.
Features
․High emitter-base voltage VEBO=7.5V(min)- ․High reverse h FE ․Low on resistance reverse h FE=20(min) (VCE=2V, IC=4m A) Ron=0.6Ω (Typ.) (IB=1m A)
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 o C) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 25 16 7.5- 300 30 400 125 -55 to +125 Unit V V V m A m A m W
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SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 09/04/2003
ST 2SD1303
Characteristics at Tamb=25 o C Symbol DC Current Gain at VCE=2V, IC=4m A (for) at VCE=2V, IC=4m A (rev) Collector Cutoff Current at VCB=25V Emitter Cutoff Current at VEB=7.5V Collector Emitter Saturation Voltage at IC=100m A, IB=10m A Base Emitter Saturation Voltage at IC=100m A, IB=10m A Transition Frequency at VCE=10V, IE=1m A Collector Output Capacitance at VCB=10V, f=1MHz On Resistance at IB=1m A, f=1KHz, Vin=0.3V Ron 0.6 Ω COB 10 p F f T 60 MHz VBE(sat) 1 V VCE(sat) 0.25 V IEBO 0.1 μA ICBO 0.1 μA h FE h FE 200 20 800 Min. Typ. Max. Unit
..
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 09/04/2003
ST 2SD1303
COLLECTOR EMITTER SATURATION VOLTAGE, V
VCE(sat)
- I C
Cob
- VCB
COLLECTOR OUTPUT CAPACITANCE, p F
100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10
Ta=75 C 25 C -25 C
24 20 16 12 8 4 0 1 2 4 6 10 20 40 60 100
COLLECTOR BASE VOLTAGE, V
COLLECTOR CURRENT, A
R ON
- I...