ST8050U Datasheet | SEMTECH

ST 8050U NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 40 25 6 1.5 625 150 - 55 to + 150 Unit V V V A m W Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 5 m A at VCE = 1 V, IC = 100 m A Current Gain Group C D at VCE = 1 V, IC = 800 m A Collector Base Cutoff Current at VCB = 35 V Emitter Base Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 2 m A Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 800 m A, IB = 80 m A Base Emitter Saturation Voltage at IC = 800 m A, IB = 80 m A Base Emitter Voltage at IC = 10 m A, VCE = 1 V Gain Bandwidth Product at VCE = 10 V, IC = 50 m A Collector Base Capacitance at VCB = 10 V, f = 1 MHz .. Symbol h FE h FE h FE h FE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) VBE f T COB Min. 45 120 160 40 40 25 6 100 - Typ. 9 Max. 200 300 100 100 0.5 1.2 1 - Unit n A n A V V V V V V MHz p F SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 19/09/2008 ST 8050U .. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated :...