ST8550
ST8550 is PNP Silicon Epitaxial Planar Transistor (1.5A) manufactured by SEMTECH.
ST 8550 (1.5A)
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages.
The transistor is subdivided into two groups, C and D, according to its DC current gain. As plementary type the NPN transistor ST 8050 is remended.
On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25o C)
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCEO -VCBO -VEBO
-IC -ICM -IB Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 25 40 6 1 1.5 100 1 150
-55 to +150
Unit V V V A A m A W OC OC
РАДИОТЕХ-ТРЕЙД
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ST 8550 (1.5A)
Characteristics at Tamb=25 OC
DC Current Gain at -VCE=1V, -IC=5m A at -VCE=1V, -IC=100m A at VCE=1V, IC=800m A Collector Cutoff Current at -VCB=35V Emitter Cutoff Current at -VBE=6V Collector Saturation Voltage at -IC=800m A, -IB=80m A Base Saturation Voltage at -IC=800m A, -IB=80m A Collector Emitter Breakdown Voltage at -IC=2m A Collector Base Breakdown Voltage at -IC=100µA Emitter Base Breakdown Voltage at -IE=100µA Base Emitter Voltage at -IC=10m A, -VCE=1V Gain Bandwidth Product at -VCE=10V, -IC=50m A Collector Base Capacitance at -VCB=10V, f=1MHz
Symbol
8550C 8550D h FE h FE h FE h FE
-ICBO
-IEBO
-VCE(sat)
-VBE(sat)
-V(BR)CEO
-V(BR)CBO
-V(BR)EBO
-VBE f...
