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1N6510 - Isolated Diode Array

Key Features

  • Protects up to 8 I/O Ports.
  • Isolated diodes eliminate crosstalk.
  • High Density Packaging.
  • High Breakdown Voltage; High Speed Switching (< 10 nsec).
  • Low Capacitance; Low Leakage.
  • Hermetic Ceramic package.
  • TX, TXV, S level screening available Maximum Ratings: All ratings are at 25 oC unless otherwise noted Characteristics Symbol Condition Reverse Breakdown Voltage VBR Per diode, Pulsed @ IR = 5 A Continuous Forward Current Pw=300 s +/- 50µs; duty < 2% I.

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Datasheet Details

Part number 1N6510
Manufacturer SENSITRON SEMICONDUCTOR
File Size 120.61 KB
Description Isolated Diode Array
Datasheet download datasheet 1N6510 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4207, REV. - Isolated Diode Array Applications:  High Frequency Data Lines  RS-323 & RS-432 Networks  LAN, Ethernet, I/O Ports  IEC61000-4 compatible for ESD / EFT / Surge Features:  Protects up to 8 I/O Ports  Isolated diodes eliminate crosstalk  High Density Packaging  High Breakdown Voltage; High Speed Switching (< 10 nsec)  Low Capacitance; Low Leakage  Hermetic Ceramic package  TX, TXV, S level screening available Maximum Ratings: All ratings are at 25 oC unless otherwise noted Characteristics Symbol Condition Reverse Breakdown Voltage VBR Per diode, Pulsed @ IR = 5 A Continuous Forward Current Pw=300 s +/- 50µs; duty < 2% IF Per diode, Derate at 2.4 mA/oC above 25 oC Peak Surge Current IFSM Per diode, tp=8.