• Part: SGM11108E
  • Description: SP8T High Power RF Switch
  • Manufacturer: SG Micro
  • Size: 542.85 KB
Download SGM11108E Datasheet PDF
SG Micro
SGM11108E
SGM11108E is SP8T High Power RF Switch manufactured by SG Micro.
DESCRIPTION The SGM11108E is a single-pole/eight-throw (SP8T) antenna switch, which supports from 0.1GHz to 3GHz. The device features low insertion loss and high isolation, which make it suitable for 2G/3G/4G transmitting/receiving (TRx) applications. It also has the advantage of high linearity performance. The SGM11108E is not subject to cellular interference and is applied to multi-mode and multi-band LTE mobile phones. The SGM11108E has the ability to integrate SP8T RF switch and GPIO controller on an SOI chip. Internal driver and decoder for switch control signals are offered by the GPIO controller, which makes it flexible in RF path band and routing selection. No external DC blocking capacitors required on the RF paths as long as no external DC voltage is applied, which can save PCB area and cost. The SGM11108E is available in a Green UTQFN-2×2-14L package. APPLICATIONS Receiving Band Switching and Pre-PA Switching 2G/3G/4G Transmitting/Receiving (TRx) FEATURES - Supply Voltage Range: 2.5V to 3.4V - GPIO Controller - Low Insertion Loss: 0.53d B (TYP) at 2.7GHz - Operating Frequency Range: 0.1GHz to 3GHz - High Isolation: 17d B (MIN) at 2.7GHz - Advanced Silicon-On-Insulator (SOI) Process - No External DC Blocking Capacitors Required - Available in a Green UTQFN-2×2-14L Package BLOCK DIAGRAM VDD V1 V2 V3 Supply and Logic RF1 RF2 RF3 RF4 RF5 RF6 RF7 RF8 Figure 1. SGM11108E Block Diagram SG Micro Corp .sg-micro. NOVEMBER 2023 - REV. A.2 SP8T High Power RF Switch PACKAGE/ORDERING INFORMATION MODEL PACKAGE DESCRIPTION SGM11108E UTQFN-2×2-14L SPECIFIED TEMPERATURE RANGE -40℃ to...