Datasheet4U Logo Datasheet4U.com

SGM13005M4 - Low Noise Amplifier

Description

The SGM13005M4 is a low noise amplifier (LNA) with bypass for LTE middle band receiving application, or for GLONASS, Galileo, Beidou and GPS applications.

Features

  • high gain, low noise figure and high linearity over a supply voltage range from 1.5V to 3.6V. Low noise figure and high gain improve the sensitivity of the SGM13005M4, and high linearity enables the device to provide better immunity to interference signals. No external DC blocking capacitors are required on the RF paths as long as no external DC voltage is applied, which can save PCB area and cost. The SGM13005M4 is available in a Green UTDFN1.1×0.7-6L package.

📥 Download Datasheet

Datasheet preview – SGM13005M4

Datasheet Details

Part number SGM13005M4
Manufacturer SG Micro
File Size 557.48 KB
Description Low Noise Amplifier
Datasheet download datasheet SGM13005M4 Datasheet
Additional preview pages of the SGM13005M4 datasheet.

📁 Similar Datasheet

  • SGM107R7T - 100V 90A N-CHANNEL POWER MOSFET (HiSemicon)
  • SGM150TL6A9TFD - 650V IGBT (Silan Microelectronics)
  • SGM15PA12A5TFD - 1200V IGBT (Silan Microelectronics)
  • SGM1K35N20 - N-CHANNEL MOSFET (SeCoS)
  • SGM1N25E - N-CHANNEL MOSFET (SeCoS)
  • SGM-2-17 - DOUBLE-BALANCED MIXER DOUBLE-BALANCED MIXER (Synergy)
  • SGM031R7T - 150A N-CHANNEL POWER MOSFET (HI-SEMICON)
  • SGM0410 - N-Channel Enhancement Mode Power MOSFET (SeCoS)
  • SGM0410-C - N-Channel Enhancement Mode Power MOSFET (SeCoS)
  • SGM0410S - N-Channel Enhancement Mode Power MOSFET (SeCoS)
Other Datasheets by SG Micro

Full PDF Text Transcription

Click to expand full text
SGM13005M4 Low Noise Amplifier with Bypass Switch for LTE Middle Band and GNSS L1 Band GENERAL DESCRIPTION The SGM13005M4 is a low noise amplifier (LNA) with bypass for LTE middle band receiving application, or for GLONASS, Galileo, Beidou and GPS applications. The device features high gain, low noise figure and high linearity over a supply voltage range from 1.5V to 3.6V. Low noise figure and high gain improve the sensitivity of the SGM13005M4, and high linearity enables the device to provide better immunity to interference signals. No external DC blocking capacitors are required on the RF paths as long as no external DC voltage is applied, which can save PCB area and cost. The SGM13005M4 is available in a Green UTDFN1.1×0.7-6L package.
Published: |