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BDW93B - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Download the BDW93B datasheet PDF. This datasheet also covers the BDW93B-SGS variant, as both devices belong to the same complementary silicon power darlington transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package.

They are intented for use in power linear and switching applications.

The complementary PNP types are the BDW94B and BDW94C respectively.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BDW93B-SGS-THOMSON.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BDW93B
Manufacturer SGS-THOMSON
File Size 31.59 KB
Description COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Datasheet download datasheet BDW93B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDW94B and BDW94C respectively. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symb ol P ara me t er VCBO Collect or-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) IC Collect or Current ICM Collect or Peak Current IB Base Current Ptot T otal Dissipation at Tc ≤ 25 oC Ts tg Storage T emperature Tj Max.