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BDW93B Datasheet PDF

SGS-THOMSON BDW93B

The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDW94B and BDW94C respectively.
Part No. BDW93B
Datasheet BDW93B Download
Manufacturer
SGS-THOMSON
Description COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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BDW93B datasheet page 1 preview

DESCRIPTION

3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω

ABSOLUTE MAXIMUM RATINGS

Symb ol P ara me t er VCBO Collect or-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) IC Collect or Current ICM Collect or Peak Current IB Base Current Ptot T otal Dissipation at Tc ≤ 25 oC Ts tg Storage T emperature Tj Max. Operating Junction T emperature For PNP types voltage and current values are negative. October 1995 NPN PNP V alu e BDW93B B DW 9 3C BDW94B B DW 9 4C 80 100 80 100 12 15 0.2 80 -65 to 150 150 Unit V V A A A W oC oC 1/4 BDW93B/BDW93C/BDW94B/BDW94C THERMAL DATA Rthj-ca se Thermal Resistance Junction-case 1. 56 oC/W

ELECTRICAL CHARACTERISTICS

(Tcase = 25 oC unless otherwise specified) Symbol Parameter T est Con ditio ns ICBO Collector Cut-off Current (IE = 0) for BDW93B/94B for BDW93C/94C Tcase = 150 oC for BDW93B/94B for BDW93C/94C VCB = 80 V VCB = 100 V VCB = 80 V VCB = 100 V ICEO Collector Cut-off Current (IB = 0) for BDW93B/94B for BDW93C/94C...
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