BUW89
BUW89 is HIGH POWER NPN SILICON TRANSISTOR manufactured by SGS-THOMSON.
- Part of the BUW89-SGS comparator family.
- Part of the BUW89-SGS comparator family.
DESCRIPTION
The BUW89 is a Multiepitaxial planar NPN transistor in TO-218 plastic package. It’s intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment.
3 2 1
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VCEV VCEO V EBO IC ICM IB IBM P Ba s e
Ptot Tstg Tj
Parameter
Collector-emitter Voltage (VBE = -1.5V) Collector-emitter Voltage (IB = 0) Emitt er-Base Voltage (IC = 0) Collector Current Collector Peak Current
Base Current Base Peak Current Reverse Bias Base Power Dissipation (B.E. junction in avalanche) Tot al Power Dissipation at Tcase < 25 o C Storage T emperature Max Operating Junction Temperature
July 1997
Value 160 90 7 25 45 6 9 1
125 -65 to 175
Unit V V V A A A A W
W o C o C
1/5
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max 1.2 o C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
I CE R
Collector Cut-off Current (RBE = 10Ω)
VCE = VCEV VCE = VCEV
Tc = 100o C
ICEV Collect or Cut-off Cu r re nt
VCE = VCEV VBE = -1. 5V VCE = VCEV VBE =
- 1.5V TC=100 o C
IEBO
Emitter Cut-off Current (IC = 0)
VCEO(sus )∗ Collect or-Emitter Sustaining Voltage
VEB = 5 V
IC = 0.2A L = 25 m H
VEB0 VCE(sat )∗
Em it t er -base Voltage (Ic = 0)
Co lle ct or- Em it t er Saturation...
