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~ INTEGRATED CIRCUIT
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M 2316E
f16384 BIT READ ONLY MEMORY
t- SINGLE +5V ± 10% POWER SUPPLY
lit ACCESS TIME 450 ns (MAX.)
f.iii INPUTS AND OUTPUTS TTL COMPATIBLE THREE PROGRAMMABLE CHIP SELECTS FOR SIMPLE MEMORY EXPANSION AND SYSTEM . INTERFACE ~ COMPLETLY STATIC OPERATION
l* THREE-STATE OUTPUT FOR DIRECT BUS INTERFACE
~
'The M 2316E is a 16384 bit static Read Only Memory N-channel Si-Gate MOS organized as 2048 words ;by 8 bits. Its high bit density is ideal for large, non-volatile data storage applications such as program ~.storage. The three-state outputs and TTL input/output levels allow for direct interface with common :;system bus structu res. -the M 2316E is available in 24-lead dual-in-line plastic package.
M2316E Datasheet
