M2316E Datasheet | SGS

f'- f ~ INTEGRATED CIRCUIT r M 2316E f16384 BIT READ ONLY MEMORY t- SINGLE +5V ± 10% POWER SUPPLY lit ACCESS TIME 450 ns (MAX.) f.iii INPUTS AND OUTPUTS TTL PATIBLE THREE PROGRAMMABLE CHIP SELECTS FOR SIMPLE MEMORY EXPANSION AND SYSTEM . INTERFACE ~ PLETLY STATIC OPERATION l- THREE-STATE OUTPUT FOR DIRECT BUS INTERFACE ~ 'The M 2316E is a 16384 bit static Read Only Memory N-channel Si-Gate MOS organized as 2048 words ;by 8 bits. Its high bit density is ideal for large, non-volatile data storage applications such as program ~.storage. The three-state outputs and TTL input/output levels allow for direct interface with mon :;system bus structu res. -the M 2316E is available in 24-lead dual-in-line plastic package. r ABSOLUTE MAXIMUM RATINGS Input voltage (at any pin) Total power dissipation Storage temperature Operating temperature under bias '. This voltage is with respect to Ground ~RDERING NUMBER: M 2316E B1 for dual in-line plastic package MECHANICAL DATA 1485 I ~ ~~.~ -0.5 to 7 v 1W -55 to + 125 DC -10 to 80 DC Dimensions in mm PIN CONNECTIONS A7 Vcc A6 A8 A5 A9 A4 CS3 A3 A2 CS2 D7 D5 GNo...