BLH3355
BLH3355 is NPN EPITAXIAL SILICON RF TRANSISTOR manufactured by SHANGHAI BELLING.
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NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355)
Description
NPN epitaxial silicon RF transistor for microwave low-noise amplification
Features
Low noise and high gain bandwidth product High power gain
Applications
UHF / VHF wide band amplifier
Structure
Planar type Electrodes: Aluminum alloy Backside metal: Au alloy
Size
Chip size: 370µm ×370µm Chip thickness: 220±20µm. Pad size:...
