BLH3355 - NPN EPITAXIAL SILICON RF TRANSISTOR

SHANGHAI BELLING

General Description

NPN epitaxial silicon RF transistor for microwave low-noise amplification

Key Features

Low noise and high gain bandwidth product High power gain.

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Datasheet Details

Part number	BLH3355
Manufacturer	SHANGHAI BELLING
File Size	109.66 KB
Description	NPN EPITAXIAL SILICON RF TRANSISTOR
Datasheet	BLH3355 Datasheet

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www.DataSheet4U.com BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355) Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Featu...

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xial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier Structure Planar type Electrodes: Aluminum alloy Backside metal: Au alloy Size Chip size: 370µm ×370µm Chip thickness: 220±20µm. Pad size: φ100µm ABSOLUTE MAXIMUM RATING Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Value 20 12 3.