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BLV7002 - N-channel Enhancement Mode Vetical D-MOS Transistor

General Description

N-channel enhancement mode field-effect transistor

Key Features

  • Very fast switching Logic level compatible.

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Datasheet Details

Part number BLV7002
Manufacturer SHANGHAI BELLING
File Size 132.07 KB
Description N-channel Enhancement Mode Vetical D-MOS Transistor
Datasheet download datasheet BLV7002 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BLV7002 BLV7002 N-channel Enhancement Mode Vertical D-MOS Transistor Chip Description N-channel enhancement mode field-effect transistor Features Very fast switching Logic level compatible Applications Relay driver High speed line driver Logic level translator. Size Chip size: 495µm ×490µm Chip thickness: 220±20µm. structure Planar type Electrodes: Aluminum alloy Backside metal: Au alloy Scribe street width: 50µm Pad size: 90µm x90µm Die per wafer: 25800 ABSOLUTE MAXIMUM RATING Symbol VDS VGS ID IDM Ptot TSTG Tj Parameter Drain – source voltage (DC) Gate – source voltage (DC) Drain current (DC) Peak drain current Total power dissipation Storage temperature Junction temperature Min. -55 - Max. 60 ±20 115 0.46 0.2 +150 150 Unit V V mA A W o C o C http://www.