SHANTOU HUASHAN ELECTRONIC DEVICES H1020S
PNP Silicon Transistor
| Part No. | H1020S |
|---|---|
| Datasheet | H1020S Download |
| Manufacturer |  SHANTOU HUASHAN ELECTRONIC DEVICES |
| Description | PNP Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
power amplifierAPPLICATIONS
, power SwitchingAPPLICATIONS
. █ABSOLUTE MAXIMUM RATINGS
（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………750mW VCBO——Collector-Base Voltage………………………………-50V VCEO——Collector-Emitter Voltage……………………………-50V VEBO——Emitter-Base Voltage………………………………-5V IC——Collector Current……………………………………-2A █ELECTRICAL CHARACTERISTICS
（Ta=25℃） TO-92 1―Emitter，E 2―Collector，C 3―Base，B Symbol BVCBO BVCEO BVEBO ICBO IEBO HFE(1) HFE(2) VCE(sat) VBE(sat) fT Cob tON tSTG tF Characteristics Min Typ Max Unit Test Conditions Collector-Base Breakdown Voltage -50 V IC=-100μA, IE=0 Collector-Emitter Breakdown Voltage -50 V IC=-10mA, IB=0 Emitter-Base Breakdown Voltage -5 V IE=-100μA，IC=0 Collector Cut-off Current -1.0 μA VCB=-50V, IE=0 Emitter Cut-off Current -1.0 μA VEB=-5V, IC=0 DC Current Gain 70 240 VCE=-2V, IC=-0.5A 40 VCE=-2V, IC=-1.5A Collector- Emitter Saturation Voltage -0.5 V IC=-1A, IB=...
