SHANTOU HUASHAN ELECTRONIC DEVICES H1116
PNP SILICON TRANSISTOR
| Part No. | H1116 |
|---|---|
| Datasheet | H1116 Download |
| Manufacturer |  SHANTOU HUASHAN ELECTRONIC DEVICES |
| Description | PNP SILICON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
Audio frequency power Aamplifier& Medium Speed switching Low frequency power amplifier.ABSOLUTE MAXIMUM RATINGS
Ta=25 Tstg Storage Temperature Tj Junction Temperature -55~150 150 PC Collector Dissipation VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 75 0mW - 60 V - 50 V VEBO Emitter- Base Voltage -6V IC Collector Current -1A ICP Collector Current Pulse -2AELECTRICAL CHARACTERISTICS
Ta=25 Symbol Characteristics Min Typ Max BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current HFE 1 DC Current Gain HFE 2 DC Current Gain VCE(sat) Collector- Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage fT Current Gain-Bandwidth Product Cob Output Capacitance hFE Classification TO-92 1 Emitter E 2 Collector C 3 Base B Unit Test Conditions 135 270 200 400 300 600 Shantou Huashan Electronic Devices Co.,Ltd.
