• Part: H2717
  • Description: NPN SILICON TRANSISTOR
  • Category: Transistor
  • Manufacturer: SHANTOU HUASHAN ELECTRONIC DEVICES
  • Size: 199.00 KB
Download H2717 Datasheet PDF
SHANTOU HUASHAN ELECTRONIC DEVICES
H2717
H2717 is NPN SILICON TRANSISTOR manufactured by SHANTOU HUASHAN ELECTRONIC DEVICES.
N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. - APPLICATIONS TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) T stg - - Storage Temperature ………………………… -55~150 ℃ Tj- - Juncttion Temperature …………………………………150℃ PC- - Collector Dissipation…………………………………300m W VCBO- - Collector-Base Voltage ………………………………30V VCEO- - Collector-Emitter Voltage……………………………25V V EB O - - Emitter-Base Voltage ……………………………… 4V IC- - Collector Current…………………………………………50m A Ie- - Emitter Current…………………………………………-50m A 1―Base,B 2―Emitter,E 3―Collector, C TO-92 - ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base- Emitter Saturation Voltage Output Capacacitance Current Gain-Bandwidth Product Power Gain(Fig) Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO ICBO IEBO HFE VBE(sat) Cob f T Gpe 30 25 4 0.1 0.1 40 240 0.2 1.5 0.8 300 28 36 2.0 V V V μA μA V V p F MHz d B IC=100μA,IE=0 IC=10m A,IB=0 IE=100μA,IC=0 VCB=30V, IE=0 VEB=3V, IC=0 VCE=12.5V, IC=12.5m A IC=15m A, IB=1.5m A IC=15m A,IB=1.5m A VCB=10V,IE=0,f=30MHz VCE=12.5V, IC=12.5m A Vcc=12.5V, IE=-12.5m A, f=45MHz VCE(sat) Collector- Emitter Saturation Voltage .Data Sheet.in Shantou Huashan Electronic Devices Co.,Ltd. .Data Sheet.in Shantou Huashan Electronic Devices Co.,Ltd. .Data...