H2717
H2717 is NPN SILICON TRANSISTOR manufactured by SHANTOU HUASHAN ELECTRONIC DEVICES.
N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
- APPLICATIONS
TV FINAL PICTURE IF AMPLIFIER APPLICATIONS.
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
T stg
- - Storage Temperature ………………………… -55~150 ℃ Tj-
- Juncttion Temperature …………………………………150℃ PC-
- Collector Dissipation…………………………………300m W VCBO-
- Collector-Base Voltage ………………………………30V VCEO-
- Collector-Emitter Voltage……………………………25V V EB O
- - Emitter-Base Voltage ……………………………… 4V IC-
- Collector Current…………………………………………50m A Ie-
- Emitter Current…………………………………………-50m A 1―Base,B 2―Emitter,E 3―Collector, C TO-92
- ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base- Emitter Saturation Voltage Output Capacacitance Current Gain-Bandwidth Product Power Gain(Fig) Min Typ Max Unit Test Conditions
BVCBO BVCEO BVEBO ICBO IEBO HFE VBE(sat) Cob f T Gpe
30 25 4 0.1 0.1 40 240 0.2 1.5 0.8 300 28 36 2.0
V V V μA μA V V p F MHz d B
IC=100μA,IE=0 IC=10m A,IB=0 IE=100μA,IC=0 VCB=30V, IE=0 VEB=3V, IC=0 VCE=12.5V, IC=12.5m A IC=15m A, IB=1.5m A IC=15m A,IB=1.5m A VCB=10V,IE=0,f=30MHz VCE=12.5V, IC=12.5m A Vcc=12.5V, IE=-12.5m A, f=45MHz
VCE(sat) Collector- Emitter Saturation Voltage
.Data Sheet.in
Shantou Huashan Electronic Devices Co.,Ltd.
.Data Sheet.in
Shantou Huashan Electronic Devices Co.,Ltd.
.Data...