SHANTOU HUASHAN ELECTRONIC DEVICES H558
NPN SILICON TRANSISTOR
| Part No. | H558 |
|---|---|
| Datasheet | H558 Download |
| Manufacturer |  SHANTOU HUASHAN ELECTRONIC DEVICES |
| Description | NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
SWITCHING AND AMPLIFIER ¨€ABSOLUTE MAXIMUM RATINGS
£¨ Ta=25¡æ£© TO-92 T stg ¡ ª ¡ ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-55~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ PC¡ª¡ªCollector Dissipation¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡500mW VCBO ¡ª¡ª Collector-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-30V VCEO¡ ª ¡ ªCollector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-30V VE B O ¡ ª ¡ ªEmitter-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-5V IC¡ ª ¡ ªCollector Current¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-100mA 1¨D Collector£¬ C 2¨D Base£¬ B 3¨D Emitter£¬ E ¨€ELECTRICAL CHARACTERISTICS
£¨ Ta=25¡æ£© Characteristics Min Typ Max Unit Test Conditions Symbol BVCBO BVCEO BVEBO ICBO HFE VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) VBE(ON1) VBE(ON2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product...