SHANTOU HUASHAN ELECTRONIC DEVICES H926
PNP SILICON TRANSISTOR
| Part No. | H926 |
|---|---|
| Datasheet | H926 Download |
| Manufacturer |  SHANTOU HUASHAN ELECTRONIC DEVICES |
| Description | PNP SILICON TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
（Ta=25℃） T stg —— Storage Temperature ………………………… -55~150 ℃ T j —— Junction Temperature ………………………………… 150 ℃ PC——Collector Dissipation…………………………………750mW VCBO——Collector-Base Voltage………………………………-30V VCEO——Collector-Emitter Voltage……………………………-25V V EBO —— Emitter-Base Voltage ……………………………… -6V I C —— Collector Current …………………………………… -2A TO-92 1―Emitter，E 2―Collector， C 3―Base，B █ELECTRICAL CHARACTERISTICS
（Ta=25℃） Symbol Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO HFE(1) HFE(2) VCE(sat) VBE(sat) ICBO IEBO fT Cob -30 -25 -6 100 65 130 -0.35 -0.85 -0.6 -1.2 -100 -100 150 32 560 V V V IC=-10μA, IE=0 IC=-1mA, IB=0 IE=-10μA，IC=0 VCE=-2V, IC=-100mA VCE=-2V, IC=-1.5A * DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-off Current V V nA nA MHz pF IC=-1.5A, IB=-75mA * IC=-1.5A, IB=-75mA * VCB=-20V, IE=0 V...
