SHANTOU HUASHAN ELECTRONIC DEVICES HP147TS
PNP SILICON TRANSISTOR
| Part No. | HP147TS |
|---|---|
| Datasheet | HP147TS Download |
| Manufacturer |  SHANTOU HUASHAN ELECTRONIC DEVICES |
| Description | PNP SILICON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
High DC Current Gain █ABSOLUTE MAXIMUM RATINGS
（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 70W VCBO——Collector-Base Voltage………………………… -100V VCEO——Collector-Emitter Voltage……………………… -100V VEBO——Emitter-Base Voltage……………………………… -5V IC——Collector Current（DC）……………………………… -8A IB——Base Current…………………………………………-0.5A TO-220 1―Base，B 2―Collector，C 3―Emitter, E █ELECTRICAL CHARACTERISTICS
（Ta=25℃） Symbol Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter-Base Cutoff Current Min Typ Max Unit Test Conditions BVCEO(SUS) ICEO ICBO IEBO HFE（1） HFE（2） VCE(sat1) VCE(sat2) VBE(sat) VBE(on) tD tR tS tF -100 -2 -1 -2 1000 1000 -2 -3 -3.5 -3 0.15 0.55 2.5 2.5 V mA mA mA IC=-30mA, IB=0 VCE=-50V, IB=0 VCB=-100V, IE=0 VEB=-5V, IC=0 VCE=-4V, IC=-0.5A VCE=-4V, IC=-3A DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Vol...