SHANTOU HUASHAN ELECTRONIC DEVICES HP50
NPN SILICON TRANSISTOR
| Part No. | HP50 |
|---|---|
| Datasheet | HP50 Download |
| Manufacturer |  SHANTOU HUASHAN ELECTRONIC DEVICES |
| Description | NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
High Voltage And switching. ¨€ABSOLUTE MAXIMUM RATINGS
£¨ Ta=25¡æ£© T stg ¡ª¡ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡- 65~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ PC¡ª¡ªCollector Dissipation£¨ T c=25¡æ £©¡-¡-¡-¡-¡-¡-¡-¡40W TO-220 VCBO ¡ª¡ª Collector-Base Voltage¡-¡-¡-¡-¡-¡-¡¡-¡-¡500V VCEO¡ª¡ª Collector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡400V VEBO ¡ª¡ª Emitter-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡5V IC¡ª¡ªCollector Current £¨ DC£ © ¡-¡-¡-¡-¡¡¡-¡-¡-¡-¡-¡-¡1A IC¡ª¡ªCollector Current£¨ Pulse£©¡-¡-¡-¡-¡-¡-¡¡¡-¡-¡-¡2A IB¡ª¡ª Base Current¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡0.6A 1¨D Base£¬ B 2¨D Collector£¬ C 3¨D Emitter, E ¨€ELECTRICAL CHARACTERISTICS
£¨ Ta=25¡æ£© Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO ICEO IEBO ICES HFE£¨ 2£© HFE VCE(sat) VBE(on) fT R¦È JC R¦È JA Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter-Base Cutoff Current 400 1 1 V IC=30mA, IB=0 mA VCE=300V, IB=0 m A VEB=5V, IC=0 mA VCE=500V, VEB=0 VCE=10V, IC=0.3A...
