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HBT151 - Silicon Controlled Rectifier

General Description

Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance.

Typical applications include motor control, industrial and domestic lighting, heating and static switching.

Key Features

  • Repetitive Peak Off-State Voltage : 600V.
  • R. M. S On-State Current(IT(RMS)=12A).
  • Average On-State Current (IT(AV)=7.5A).
  • Non-isolated Type General.

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Datasheet Details

Part number HBT151
Manufacturer SHANTOU HUASHAN
File Size 951.54 KB
Description Silicon Controlled Rectifier
Datasheet download datasheet HBT151 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shantou Huashan Electronic Devices Co.,Ltd. HBT151 Silicon Controlled Rectifier Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=12A) * Average On-State Current (IT(AV)=7.5A) * Non-isolated Type General Description Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.