• Part: KSH13005
  • Description: NPN SILICON TRANSISTOR
  • Category: Transistor
  • Manufacturer: SHANTOU HUASHAN
  • Size: 222.95 KB
Download KSH13005 Datasheet PDF
SHANTOU HUASHAN
KSH13005
KSH13005 is NPN SILICON TRANSISTOR manufactured by SHANTOU HUASHAN.
Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR ¨€ HIGH VOLTAGE SWITCH MODE APPLICICATION High Speed Switching Suitable for Switching Regulator and Montor Control ¨€ ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£© T stg ¡ª¡ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡- 55~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ PC¡ª¡ªCollector Dissipation£¨ T c=25¡æ £©¡-¡-¡-¡-¡-¡-¡-¡75W VCBO ¡ª¡ªCollector-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡700V VCEO¡ª¡ªCollector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡400V VEBO ¡ª¡ª Emitter-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡9V IC¡ª¡ªCollector Current £¨ DC£ © ¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡4A IC¡ª¡ªCollector Current £¨ Pulse£©¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡8A TO-220 1¨D Base£¬ B 2¨D Collector£¬ C 3¨D Emitter, E IB¡ª¡ª Base Current¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡2A ¨€ µç²ÎÊý £¨ Ta=25¡æ £© Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO IEBO HFE Collector-Emitter Sustaining Voltage Emitter-Base Cut-off Current DC Current Gain 400 1 10 8 40 40 0.5 0.6 1 V m A IC=10m A, IB=0 VEB=9V, IC=0 VCE=5V, IC=1A VCE=5V, IC=2A VCE(sat) Collector- Emitter Saturation Voltage V V V V V p F MHz IC=1A, IB =0.2A IC=2A, IB =0.5A IC=4A, IB =1A IC=1A, IB =0.2A IC=2A, IB =0.5A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A VCC=125V, IC=2A, IB1 =-IB2 =0.4A VBE(sat) Base- Emitter Saturation Voltage Cob f T t ON t S t F Output Capacitance Current Gain-Bandwidth Product Turn On Time Storage Time Fall Time 4 65 1.2 1.6 0.8 4 0.9 ¦Ì s ¦Ì s ¦Ì s h FE Classification£º H1 £¨ 10--16£© H2 £¨ 14--21£© H3 £¨ 19--26£© H4 £¨ 24--31£© H5 £¨ 29--40£© .Data...