• Part: KSH13005F
  • Description: NPN SILICON TRANSISTOR
  • Category: Transistor
  • Manufacturer: SHANTOU HUASHAN
  • Size: 165.10 KB
Download KSH13005F Datasheet PDF
SHANTOU HUASHAN
KSH13005F
KSH13005F is NPN SILICON TRANSISTOR manufactured by SHANTOU HUASHAN.
Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R - HIGH VOLTAGE SWITCH MODE APPLICICATION High Speed Switching Suitable for Switching Regulator and Montor Control - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg- - Storage Temperature………………………… -55~150℃ Tj- - Junction Temperature……………………………… 150℃ PC- - Collector Dissipation(Tc=25℃)…………………… 30W VCBO- - Collector-Base Voltage…………………………… 700V VCEO- - Collector-Emitter Voltage………………………… 400V VEBO - - Emitter-Base Voltage ……………………………… 9V IC- - Collector Current (DC) ………………………………… 4A ICP- - Collector Current (Pulse) ……………………………… 8A IB- - Base Current……………………………………………2A TO-220F 1―Base,B 2―Collector,C 3―Emitter, E - 电参数(Ta=25℃) Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO IEBO HFE VCE(sat) Collector-Emitter Sustaining Voltage Emitter-Base Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage 400 1 10 8 40 40 0.5 0.6 1 V m A IC=10m A, IB=0 VEB=9V, IC=0 VCE=5V, IC=1A VCE=5V, IC=2A V V V V V p F MHz IC=1A, IB=0.2A IC=2A, IB=0.5A IC=4A, IB=1A IC=1A, IB=0.2A IC=2A, IB=0.5A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A VCC=125V, IC=2A, IB1=-IB2=0.4A RL=125Ω VBE(sat) Base- Emitter Saturation Voltage Cob f T t ON t S t F Output Capacitance Current Gain-Bandwidth Product Turn On Time Storage Time Fall Time 4 65 1.2 1.6 0.8 4 0.9 μs μs μs h FE Classification: H1 (10--16) H2 (14--21) H3 (19--26) H4 (24--31) H5 (29--40) .Data Sheet.in Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R .Data Sheet.in Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R .Data...