SHINDENGEN D1NK100
Fast Recovery Diode
| Part No. | D1NK100 |
|---|---|
| Datasheet | D1NK100 Download |
| Manufacturer |  SHINDENGEN |
| Description | Fast Recovery Diode |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified : Tl=25℃) Item Symbol Conditions Ratings Unit Storage temperrature Tstg -55 to 150 ℃ Junction temperature Tj -55 to 150 ℃ Repetitive peak reverse voltage VRRM 1000 V 50Hz sine wave, Resistance load, On glass-epoxy Average forward current IF(AV) substrate, Tl=127℃ ※ 1 A 50Hz sine wave, Resistance load, On glass-epoxy Average forward current IF(AV) substrate, Ta=25℃ ※ 0.6 A Surge forward current 50Hz sine wave, Non-repetitive 1 cycle, Peak value, IFSM Tj=25℃ 30 A Surge forward current IFSM1 tp=1ms, Sine wave, Non-repetitive, Peak value, Tj=25℃ 55 A ※︓See the original Specifications Shindengen Electric Manufacturing Co., Ltd. 1/7 D1NK100_Rev.01(2020.01)ELECTRICAL CHARACTERISTICS
(unless otherwise specified : Tl=25℃) Item Symbol Conditions Forward voltage Reverse current Reverse recovery time Reverse recovery time Total capacitance Thermal resistance Thermal resistance VF IR trr trr Ct Rth(j-l) Rth(j-a) IF=1A, Pulse measurement VR=1000V...
