SHINDENGEN D3CE4S
Schottky Barrier Diode
| Part No. | D3CE4S |
|---|---|
| Datasheet | D3CE4S Download |
| Manufacturer |  SHINDENGEN |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified : Tl=25℃) Item Symbol Conditions Ratings Unit Storage temperrature Tstg -55 to 150 ℃ Junction temperature Tj -55 to 150 ℃ Repetitive peak reverse voltage VRRM 40 V Repetitive peak surge reverse voltage VRRSM Pulse width 0.5ms, duty=1/40 45 V Average forward current IF(AV) 50Hz sine wave, Resistance load, Tl=106℃ 3 A 50Hz sine wave, Resistance load, On glass-epoxy Average forward current IF(AV) substrate, Ta=25℃ ※ 1.7 A 50Hz sine wave, Resistance load, On glass-epoxy Average forward current IF(AV) substrate, Ta=25℃ ※ 1.3 A Surge forward current 50Hz sine wave, Non-repetitive, 1cycle, Peak value, IFSM Tj=25℃ 80 A ※︓See the original Specifications Shindengen Electric Manufacturing Co., Ltd. 1/7 D3CE4S_Rev.02(2020.03)ELECTRICAL CHARACTERISTICS
(unless otherwise specified : Tl=25℃) Item Symbol Conditions Forward voltage Reverse current Total capacitance Thermal resistance Thermal resistance Thermal resistance VF IR Ct Rth(j-l) Rth(j-a) R...
