SHINDENGEN P0R5B60HP2
Power MOSFET
| Part No. | P0R5B60HP2 |
|---|---|
| Datasheet | P0R5B60HP2 Download |
| Manufacturer |  SHINDENGEN |
| Description | Power MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified : Tc=25℃) Item Storage temperature Channel tempertature Drain-source voltage Gate-source voltage Continuous drain current(DC) Continuous drain current(Peak) Continuous source current(DC) Total power dissipation Repetitive avalanche current Single avalanche energy Repetitive avalanche energy Drain‐source diode di/dt strength Symbol Conditions Tstg Tch VDSS VGSS ID IDP Pulse width 10μs, duty=1/100 Is PT IAR Starting Tch=25℃ Tch≦150℃ EAS Starting Tch=25℃ Tch≦150℃ EAR Starting Tch=25℃ Tch≦150℃ di/dt Is=0.5A, Tc=25℃ ※︓See the original Specifications Shindengen Electric Manufacturing Co., Ltd. 1/7 Ratings -55 to 150 150 600 ±30 0.5 2 0.5 35 0.5 5 0.5 350 Unit ℃ ℃ V V A A A W A mJ mJ A/μs P0R5B60HP2_Rev.04(2022.06)ELECTRICAL CHARACTERISTICS
(unless otherwise specified : Tc=25℃) Item Symbol Conditions Drain-Source breakdown voltage Zero gate voltage drain current Gate-source leakage current Forward transconductance Static drain-source on-st...
