• Part: P55F6EN
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: Shindengen
  • Size: 1.53 MB
Download P55F6EN Datasheet PDF
Shindengen
P55F6EN
P55F6EN is Power MOSFET manufactured by Shindengen.
Feature - N-channel - Isolated Package - Low Ron - 10V Gate Drive - Low Capacitance - Pb free terminal - Ro HS:Yes OUTLINE Package (House Name): FTO-220AG Package (JEITA Code): SC-91 Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tc=25℃) Item Storage temperature Channel tempertature Drain-source voltage Gate-source voltage Continuous drain current(DC) Continuous drain current(Peak) Total power dissipation Single avalanche current Single avalanche energy Dielectric strenght Mounting torque Symbol Conditions Tstg Tch VDSS VGSS Pulse width 10μs, duty=1/100 Starting Tch=25℃ Tch≦150℃ Starting Tch=25℃ Tch≦150℃ Vdis Terminals to case, AC1min TOR (Remended torque:0.3N・m) ※︓See the original Specifications Shindengen Electric Manufacturing Co., Ltd. 1/7 Ratings -55 to 150 150 60 ±20 55 220 44 55 151 2 0.5 Unit ℃ ℃ V V A A W A m J k V N・m P55F6EN_Rev.02(2022.03) Electrical Characteristics (unless otherwise specified : Tc=25℃) Item Symbol Conditions Drain-Source breakdown voltage Zero gate voltage drain current Gate-source leakage current Forward transconductance Static drain-source on-state resistance Gate threshold voltage Source-drain diode forward voltage Thermal resistance Total gate charge Gate to source charge Gate to drain charge Input capacitance Reverce transfer capacitnce Output...