The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Shenzhen SI Semiconductors Co., LTD.
Product Specification
N- MOS / N-CHANNEL POWER MOSFET
SIF2N60D
●： RoHS
■ ●FEATURES：■LOW ON-RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE RoHS COMPLIANT
●：
●APPLICATION: ■ELECTRONIC BALLAST■ELECTRONIC TRANSFORMER■SWITCH MODE POWER SUPPLY
●（Tc=25°C） ●Absolute Maximum Ratings（Tc=25°C）
PARAMETER
SYMBOL
- Drain-source Voltage
VDS
- gate-source Voltage
VGS
Continuous Drain Current
ID
TC=25℃
Continuous Drain Current
ID
TC=100℃
VALUE
600 ±30
2.0
1.25
TO-220/220FP
UNIT
V V
A
A
Drain Current －Pulsed ①
IDM
8
A
Power Dissipation
Ptot
Junction Temperature
Tj
Storage Temperature
TSTG
Single Pulse Avalanche Energy②
EAS
TO-220:54 TO-220FP:23
W
150
°C
-55-150
°C
120
mJ
VDS=600V RDS(ON)=4.5Ω ID=2.
SIF2N60D Datasheet
