Datasheet Details
| Part number | S60N18R |
|---|---|
| Manufacturer | SI-TECH |
| File Size | 1.79 MB |
| Description | N-Channel MOSFET |
| Download | S60N18R Download (PDF) |
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Overview: SI-TECH SEMICONDUCTOR CO.,LTD.
Download the S60N18R datasheet PDF. This datasheet also includes the S60N18R-SI variant, as both parts are published together in a single manufacturer document.
| Part number | S60N18R |
|---|---|
| Manufacturer | SI-TECH |
| File Size | 1.79 MB |
| Description | N-Channel MOSFET |
| Download | S60N18R Download (PDF) |
|
|
|
D D G S Package Package Code G D S TO-220 R Package Marking G S TO-263 S G D S TO-220N RN G D S TO-220P RP Company Part No.
and Package Code Assembly Information Lot No.
Absolute Maximum Ratings(TC=25℃ unless otherwise noted) Symbol VDSS ID IDM VGS EAS PD TJ TSTG Ver.2.0 Parameter Drain-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperature Range 1 Value 60 180 114 720 25 900 227 1.82 -55 to +150 -55 to +150 Units V A A A V mJ W W/℃ ℃ ℃ Mar.2020 SI-TECH SEMICONDUCTOR CO.,LTD Thermal Characteristics Symbol Rth j-c Parameter Thermal Resistance, Junction to case S60N18R/S/RN/RP N-Channel Power MOSFET Value 0.55 Units ℃/ W Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Qg Qgs Qgd td(on) tr td(off) tf Rg Ciss Coss Crss Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=250uA Drain-Source Leakage Current VDS=57V, VGS=0V Gate Leakage Current, Forward VGS=25V, VDS=0V Gate Leakage Current, Reverse VGS=-25V, VDS=0V Gate Threshold Voltage VGS=VDS, ID=250uA Drain-Source On-State Resistance VGS=10V, ID=40A Total Gate Charge VDD=40V Gate-Source Charge VGS=10V Gate-Drain Charge ID=40A (Note 3) Turn-on Delay Time VDD=37.5V,VGS=10V Turn-on Rise Time ID=45A,RG=4.7 Turn-off Delay Time TC=25℃ Turn-off Fall Time (Note 3) Gate Resistance VDS=0V,VGS=0V,f=1MHz Input Capacitance VDS=25V Output Capacitance VGS=0V Reverse Tran
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| Part Number | Description |
|---|---|
| S60N18RN | N-Channel MOSFET |
| S60N18RP | N-Channel MOSFET |
| S60N18S | N-Channel MOSFET |
| S60N10M | N-CHANNEL POWER MOSFET |
| S60N12R | N-Channel MOSFET |
| S60N12RN | N-Channel MOSFET |
| S60N12RP | N-Channel MOSFET |
| S60N12S | N-Channel MOSFET |
| S60N15R | N-Channel MOSFET |
| S60N15RN | N-Channel MOSFET |