Datasheet Details
| Part number | S80N22T |
|---|---|
| Manufacturer | SI-TECH |
| File Size | 1.69 MB |
| Description | N-Channel Power MOSFET |
| Download | S80N22T Download (PDF) |
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Download the S80N22T datasheet PDF. This datasheet also includes the S80N22T-SI variant, as both parts are published together in a single manufacturer document.
| Part number | S80N22T |
|---|---|
| Manufacturer | SI-TECH |
| File Size | 1.69 MB |
| Description | N-Channel Power MOSFET |
| Download | S80N22T Download (PDF) |
|
|
|
D G S Package Package Code Package Marking G D S TO-247 T Company Part No.
and Package Code Assembly Information Lot No.
Absolute Maximum Ratings(TC=25℃ unless otherwise noted) Symbol VDSS ID IDM VGS EAS PD TJ TSTG Ver.2.0 Parameter Drain-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperature Range 1 Value 80 196 124 784 25 1122 290 2.32 -55 to +150 -55 to +150 Units V A A A V mJ W W/℃ ℃ ℃ Mar.2020 SI-TECH SEMICONDUCTOR CO.,LTD Thermal Characteristics Symbol Rth j-c Parameter Thermal Resistance, Junction to case S80N22T N-Channel Power MOSFET Value 0.43 Units ℃/ W Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Qg Qgs Qgd td(on) tr td(off) tf Rg Ciss Coss Crss Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=250uA Drain-Source Leakage Current VDS=76V, VGS=0V Gate Leakage Current, Forward VGS=25V, VDS=0V Gate Leakage Current, Reverse VGS=-25V, VDS=0V Gate Threshold Voltage VGS=VDS, ID=250uA Drain-Source On-State Resistance VGS=10V, ID=40A Total Gate Charge VDD=60V Gate-Source Charge VGS=10V Gate-Drain Charge ID=40A (Note 3) Turn-on Delay Time VDD=37.5V,VGS=10V Turn-on Rise Time ID=45A,RG=4.7 Turn-off Delay Time TC=25℃ Turn-off Fall Time (Note 3) Gate Resistance VDS=0V,VGS=0V,f=1MHz Input Capacitance VDS=25V Output Capacitance VGS=0V Reverse Transfer Capacitance f = 1MHz Min.
SI-TECH SEMICONDUCTOR CO.,LTD.
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