Datasheet4U Logo Datasheet4U.com

S90N030S - N-Channel MOSFET

This page provides the datasheet information for the S90N030S, a member of the S90N030R-SI N-Channel MOSFET family.

Datasheet Summary

Description

This Power MOSFET is produced using Si-Tech’s advanced Split-Gate MOS Technology.

Features

  • 90V,190A,Rds(on)(typ)=3mΩ @Vgs=10V.
  • High Ruggedness.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • Split-Gate MOS Technology General.

📥 Download Datasheet

Datasheet preview – S90N030S

Datasheet Details

Part number S90N030S
Manufacturer SI-TECH
File Size 423.95 KB
Description N-Channel MOSFET
Datasheet download datasheet S90N030S Datasheet
Additional preview pages of the S90N030S datasheet.

📁 Similar Datasheet

  • S9004P2CT - 30A SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
  • S9005P2CT - 20A SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
  • S9011 - NPN Transistor (WEJ)
  • S9011 - NPN Silicon Epitaxial Planar Transistor (BL)
  • S9011 - NPN Transistor (GME)
  • S9012 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • S9012 - PNP General Purpose Transistors (Weitron Technology)
  • S9012 - PNP Silicon Transistor (BL)
  • S9012 - PNP Transistor (INCHANGE)
  • S9012 - PNP Silicon Transistor (SeCoS)
Other Datasheets by SI-TECH

Full PDF Text Transcription

Click to expand full text
SI-TECH SEMICONDUCTOR CO.,LTD S90N030R/S N-Channel MOSFET Features █ 90V,190A,Rds(on)(typ)=3mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability █ Split-Gate MOS Technology General Description This Power MOSFET is produced using Si-Tech’s advanced Split-Gate MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Published: |