• Part: SFH601-3
  • Description: TRIOS PHOTOTRANSISTOR OPTOCOUPLER
  • Category: Optocoupler
  • Manufacturer: Siemens Semiconductor Group
  • Size: 159.53 KB
Download SFH601-3 Datasheet PDF
Siemens Semiconductor Group
SFH601-3
SFH601-3 is TRIOS PHOTOTRANSISTOR OPTOCOUPLER manufactured by Siemens Semiconductor Group.
- Part of the SFH601 comparator family.
SFH601 SERIES TRIOS®- PHOTOTRANSISTOR OPTOCOUPLER Features - High Current Transfer Ratios SFH601-1, 40 to 80% SFH601-2, 63 to 125% SFH601-3 ,100 to 200% SFH601-4, 160 to 320% - Isolation Test Voltage (1 Sec.), 5300 VACRMS - VCEsat 0.25 (≤0.4) V, IF=10 m A, IC=2.5 m A - Built to conform to VDE Requirements - Highest Quality Premium Device - Long Term Stability - Storage Temperature, - 55∞ to +150∞C - Underwriters Lab File #E52744 - CECC Approved - V VDE 0884 Available with Option 1 DESCRIPTION The SFH601 is an optocoupler with a Gallium Arsenide LED emitter which is optically coupled with a silicon planar phototransistor detector. The ponent is packeged in a plastic plug-in case 20 AB DIN 41866. The coupler transmits signals between two electrically isolated circuits. Maximum Ratings Emitter Reverse Voltage................................................. 6 V DC Forward Current...................................... 60 m A Surge Forward Current (tp=10 µs).................. 2.5 A Total Power Dissipation.............................. 100 m W Detector Collector-Emitter Voltage .............................. 100 V Emitter-Base Voltage ......................................... 7 V Collector Current........................................... 50 m A Collector Current (t=1 ms) .......................... 100 m A Power Dissipation ...................................... 150 m W Package Isolation Test Voltage (between emitter and detector referred to climate DIN 40046, part 2, Nov. 74) (t=1 sec.)..............5300 VACRMS Creepage ........................................................... ≥7 mm Clearance .......................................................... ≥7 mm Isolation Thickness between Emitter and Detector....................................................... ≥0.4 mm parative Tracking Index per DIN IEC 112/VDE0303, part 1........................175 Isolation Resistance VIO=500 V, TA=25°C................................... ≥1012 Ω VIO=500 V, TA=100°C.....................