SC8205 Datasheet | SIKEWEI ELECTRONICS

深圳市思科微电子有限公司 SHENZHEN SIKEWEI ELECTRONICS CO., LTD. SC8205(文件编号:S&CIC0692) 20V N-Channel Enhancement-Mode MOSFET RDS(ON), Vgs@1.8V, Ids@2.0A = 75mΩ RDS(ON), Vgs@2.5V, Ids@3.5A = 38mΩ RDS(ON), Vgs@4.0V, Ids@4.5A = 30mΩ RDS(ON), Vgs@4.5V, Ids@4.5A = 28mΩ RDS(ON), Vgs@10V, Ids@5.0A = 25mΩ Features ¾ Advanced trench process technology ¾ High Density Cell Design For Ultra Low On-Resistance ¾ High Power and Current handing capability ¾ Ideal for Li ion battery pack applications Internal Schematic Diagram D ra in 1 D ra in 2 G at e1 G at e2 S ou rc e 1 S ou rc e 2 N-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Drain-So...