SSF6N80G - N-Channel MOSFET

SILIKRON

General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

TO-251 (IPAK).
Advanced MOSFET process technology.
Special designed for PWM, load switching and general purpose.

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SSF6N80G n-channel mosfet by SILIKRON - Datasheet Preview

Datasheet Details

Part number	SSF6N80G
Manufacturer	SILIKRON
File Size	451.31 KB
Description	N-Channel MOSFET
Datasheet	SSF6N80G Datasheet

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Full PDF Text Transcription (Reference)

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Main Product Characteristics: VDSS RDS(on) 800V 2.35Ω (typ.) ID 5.5A Features and Benefits: TO-251 (IPAK)  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF6N80G Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.